Sanghvi Industrial Electronics

NGTB40N120FL3WG This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Ultra Field Stop Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage. Features  Extremely Efficient Trench with Field Stop Technology  TJmax = 175C  Soft Fast Reverse Recovery Diode  Optimized for High Speed Switching  These are Pb−Free Devices Typical Applications  Solar Inverter  Uninterruptible Power Inverter Supplies (UPS)  Welding