Sanghvi Industrial Electronics

GMSI-025120TNE GMSI-035120TNE GMSI-010120TND GMSI-015060SND GMHI-01506
GMSI-025120TNE GMSI-035120TNE GMSI-010120TND GMSI-015060SND GMHI-01506

GMSI-025120TNE GMSI-025120TNE GMSI-035120TNE GMSI-010120TND GMSI-015060SND GMHI-01506
GMSI-025120TNE GMSI-035120TNE GMSI-010120TND GMSI-015060SND GMHI-01506

GMSI-025120TNE GMSI-035120TNE GMSI-010120TND GMSI-015060SND GMHI-01506
GMSI-025120TNE GMSI-035120TNE GMSI-010120TND GMSI-015060SND GMHI-01506

FEATURES FUNCTIONAL BLOCK DIAGRAM 44 V Supply Maximum Rating VSS to VDD Analog Signal Range Single/Dual Supply Specifications Wide Supply Ranges (10.8 V to 16.5 V) Extended Plastic Temperature Range (–408C to +858C) Low Power Dissipation (28 mW max) Low Leakage (20 pA typ) Available in 28-Lead DIP, SOIC, PLCC, TSSOP and LCCC Packages Superior Alternative to: DG506A, Hl-506 DG507A, Hl-507 GENERAL DESCRIPTION The ADG506A and ADG507A are CMOS monolithic analog multiplexers with 16 channels and dual 8 channels, respectively. The ADG506A switches one of 16 inputs to a common output, depending on the state of four binary addresses and an enable input. The ADG507A switches one of eight differential inputs to a common differential output, depending on the state of three binary addresses and an enable input. Both devices have TTL and 5 V CMOS logic compatible digital inputs. The ADG506A and ADG507A are designed on an enhanced LC2 MOS process, which gives an increased signal capability of VSS to VDD and enables operation over a wide range of supply voltages. The devices can operate comfortably anywhere in the 10.8 V to 16.5 V single or dual supply range. These multiplexers also feature high switching speeds and low RON. PRODUCT HIGHLIGHTS 1. Single/Dual Supply Specifications with a Wide Tolerance The devices are specified in the 10.8 V to 16.5 V range for both single and dual supplies. 2. Extended Signal Range The enhanced LC2MOS processing results in a high breakdown and an increased analog signal range of VSS to VDD. 3. Break-Before-Make Switching Switches are guaranteed break-before-make so input signals are protected against momentary shorting. 4. Low Leakage Leakage currents in the range of 20 pA make these multiplexers suitable for high precision circuits.   

UM150CDY-10  Mitsubishi Electric IGBT  Module  
UM150CDY-10  Mitsubishi Electric IGBT  Module  
UM150CDY-10  Mitsubishi Electric IGBT  Module  
UM150CDY-10  Mitsubishi Electric IGBT  Module  

• Glass Passivated Chip Junction • High Surge Forward Current Capability • Epoxy Meets UL 94 V-0 Flammability Rating • Lead Free Finish/RoHS Compliant (Note 1)("P" Suffix Designates RoHS Compliant. See Ordering Information) 

Features · High speed switching · Voltage drive · Low inductance module structure Applications · Inverter for Motor drive · AC and DC Servo drive amplifier · Uninterruptible power supply · Industrial machines, such as Welding machines  

Features Fully isolated Dual In-Line molded module  TRENCHSTOP™ IGBTs  Rugged SOI gate driver technology with stability against transient and negative voltage  Allowable negative VS potential up to -11V for signal transmission at VBS=15V  Integrated bootstrap functionality  Over current shutdown  Temperature monitor  Under-voltage lockout at all channels  Low side emitter pins accessible for all phase current monitoring (open emitter)  Cross-conduction prevention  All of 6 switches turn off during protection  Lead-free terminal plating; RoHS compliant  Very low thermal resistance due to DCB Description The CIPOS™ module family offers the chance for integrating various power and control components to increase reliability, optimize PCB size and system costs. It is designed to control three phase AC motors and permanent magnet motors in variable speed drives for applications like an air conditioning, a refrigerator and a washing machine. The package concept is specially adapted to power applications, which need good thermal conduction and electrical isolation, but also EMI-save control and overload protection. TRENCHSTOP™ IGBTs and anti parallel diodes are combined with an optimized SOI gate driver for excellent electrical performance.

MG50Q1BS11 TOSHIB IGBT MODULES  
MG50Q1BS11 TOSHIB IGBT MODULES  
MG50Q1BS11 TOSHIB IGBT MODULES  
MG50Q1BS11 TOSHIB IGBT MODULES  
MG50Q1BS11 TOSHIB IGBT MODULES  

CM100RX1-24A MITSUBISHI ELECTRIC IGBT MODULES  
CM100RX1-24A MITSUBISHI ELECTRIC IGBT MODULES  
CM100RX1-24A MITSUBISHI ELECTRIC IGBT MODULES  
CM100RX1-24A MITSUBISHI ELECTRIC IGBT MODULES  
CM100RX1-24A MITSUBISHI ELECTRIC IGBT MODULES  

M746 in Vincotech refers to a specific series or identifier within their power module product line, often seen in part numbers like 10-F112M3A025SH-M746-F09, which denotes a 3-phase mixed voltage NPC (Neutral Point Clamped) power module for applications like electric drives, featuring 1200V/25A ratings, ideal for motor control. It's a type of power module used in high-power electronics, offering a compact solution for power conversion. Key Details:

• Product Type: Three-level Mixed Voltage NPC (T-Type) Power Module.
• Series: flow3xMNPC 1.
• Voltage/Current: 1200V / 25A.
• Application: Three-phase motor drives, renewable energy systems, industrial automation.
• Features: Integrated diodes, optimized thermal performance, compact footprint. 

Essentially, M746 is a descriptor for a specific, advanced power module design by Vincotech, designed for efficient power handling in demanding applications

The NXH450N65L4Q2F2 is a power module containing a I− type neutral point clamped three−level inverter. The integrated field stop trench IGBTs and FRDs provide lower conduction losses and switching losses, enabling designers to achieve high efficiency and superior reliability

TypischeAnwendungen TypicalApplications • Hilfsumrichter • AuxiliaryInverters • Klimaanlagen • AirConditioning • Motorantriebe • MotorDrives ElektrischeEigenschaften ElectricalFeatures • NiedrigeSchaltverluste • LowSwitchingLosses • TrenchIGBT4 • TrenchIGBT4 • VCEsatmitpositivemTemperaturkoeffizienten • VCEsatwithpositiveTemperatureCoefficient • NiedrigesVCEsat • LowVCEsat MechanischeEigenschaften MechanicalFeatures • Al2O3 Substrat mit kleinem thermischen • Widerstand Al2O3SubstratewithLowThermalResistance • KompaktesDesign • Compactdesign • Lötverbindungstechnik • SolderContactTechnology • Robuste Montage durch integrierte • Befestigungsklammern Rugged mounting due to integrated mounting clamps

FEATURE a) Adopting new 5th generation IGBT (CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.9V @Tj=125°C b) I adopt the over-temperature conservation by Tj detection of CSTBT chip, and error output is possible from all each conservation upper and lower arm of IPM. c) Current rating of brake part increased. 50% for the current rating of inverter part. •3φ 150A, 1200V Current-sense IGBT type inverter • 75A, 1200V Current-sense regenerative brake IGBT • Monolithic gate drive & protection logic • Detection, protection & status indication circuits for, shortcircuit, over-temperature & under-voltage (P-Fo available from upper arm devices) • Acoustic noise-less 30kW class inverter application