Sanghvi Industrial Electronics

GMSI-025120TNE GMSI-035120TNE GMSI-010120TND GMSI-015060SND GMHI-01506
GMSI-025120TNE GMSI-035120TNE GMSI-010120TND GMSI-015060SND GMHI-01506

GMSI-025120TNE GMSI-025120TNE GMSI-035120TNE GMSI-010120TND GMSI-015060SND GMHI-01506
GMSI-025120TNE GMSI-035120TNE GMSI-010120TND GMSI-015060SND GMHI-01506

GMSI-025120TNE GMSI-035120TNE GMSI-010120TND GMSI-015060SND GMHI-01506
GMSI-025120TNE GMSI-035120TNE GMSI-010120TND GMSI-015060SND GMHI-01506

FEATURES FUNCTIONAL BLOCK DIAGRAM 44 V Supply Maximum Rating VSS to VDD Analog Signal Range Single/Dual Supply Specifications Wide Supply Ranges (10.8 V to 16.5 V) Extended Plastic Temperature Range (–408C to +858C) Low Power Dissipation (28 mW max) Low Leakage (20 pA typ) Available in 28-Lead DIP, SOIC, PLCC, TSSOP and LCCC Packages Superior Alternative to: DG506A, Hl-506 DG507A, Hl-507 GENERAL DESCRIPTION The ADG506A and ADG507A are CMOS monolithic analog multiplexers with 16 channels and dual 8 channels, respectively. The ADG506A switches one of 16 inputs to a common output, depending on the state of four binary addresses and an enable input. The ADG507A switches one of eight differential inputs to a common differential output, depending on the state of three binary addresses and an enable input. Both devices have TTL and 5 V CMOS logic compatible digital inputs. The ADG506A and ADG507A are designed on an enhanced LC2 MOS process, which gives an increased signal capability of VSS to VDD and enables operation over a wide range of supply voltages. The devices can operate comfortably anywhere in the 10.8 V to 16.5 V single or dual supply range. These multiplexers also feature high switching speeds and low RON. PRODUCT HIGHLIGHTS 1. Single/Dual Supply Specifications with a Wide Tolerance The devices are specified in the 10.8 V to 16.5 V range for both single and dual supplies. 2. Extended Signal Range The enhanced LC2MOS processing results in a high breakdown and an increased analog signal range of VSS to VDD. 3. Break-Before-Make Switching Switches are guaranteed break-before-make so input signals are protected against momentary shorting. 4. Low Leakage Leakage currents in the range of 20 pA make these multiplexers suitable for high precision circuits.   

UM150CDY-10  Mitsubishi Electric IGBT  Module  
UM150CDY-10  Mitsubishi Electric IGBT  Module  
UM150CDY-10  Mitsubishi Electric IGBT  Module  
UM150CDY-10  Mitsubishi Electric IGBT  Module  

SKIIP32NAB125T12 SEMIKRON IGBT MODULES  
SKIIP32NAB125T12 SEMIKRON IGBT MODULES  
SKIIP32NAB125T12 SEMIKRON IGBT MODULES  
SKIIP32NAB125T12 SEMIKRON IGBT MODULES  
SKIIP32NAB125T12 SEMIKRON IGBT MODULES  
SKIIP32NAB125T12 SEMIKRON IGBT MODULES  
SKIIP32NAB125T12 SEMIKRON IGBT MODULES  

The ABB 3AFE 68969972 (also identified by Product ID 68969972) is a specific AFPS-11C Power Supply Board designed for ABB industrial inverter drives, notably the ACS800-104 series. It is a 24V DC stabilized, high-quality, and durable board used for power conversion in automation technology, with a rating of 24V 5A. Key Features and Specifications:

• Part Number/ID: 3AFE 68969972 / 68969972
• Model Designation: AFPS-11C
• Function: Primary switched-mode power supply board
• Application: Specifically for ABB inverter drives, such as the ACS800-104
• Output: 24V DC 

These boards are typically available through industrial automation suppliers, with some listings indicating they are used as spare parts for maintenance. 

The SEMiX101GD126HDs is a 1200V, 75A to 129A six-pack Trench IGBT module by Semikron Danfoss designed for high-performance inverter applications. It features homogeneous silicon, integrated thermal management, and a low VCE(sat)cap V sub cap C cap E open paren s a t close paren end-sub𝑉𝐶𝐸(𝑠𝑎𝑡) of 1.7V, making it ideal for AC drives, UPS    

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Features · High speed switching · Voltage drive · Low inductance module structure Applications · Inverter for Motor drive · AC and DC Servo drive amplifier · Uninterruptible power supply · Industrial machines, such as Welding machines  

BSM10GD120DN2E3224 Infineon Technologies IGBT Modules  
BSM10GD120DN2E3224 Infineon Technologies IGBT Modules  
BSM10GD120DN2E3224 Infineon Technologies IGBT Modules  
BSM10GD120DN2E3224 Infineon Technologies IGBT Modules  
BSM10GD120DN2E3224 Infineon Technologies IGBT Modules  

• Glass Passivated Chip Junction • High Surge Forward Current Capability • Epoxy Meets UL 94 V-0 Flammability Rating • Lead Free Finish/RoHS Compliant (Note 1)("P" Suffix Designates RoHS Compliant. See Ordering Information) 

Features Fully isolated Dual In-Line molded module  TRENCHSTOP™ IGBTs  Rugged SOI gate driver technology with stability against transient and negative voltage  Allowable negative VS potential up to -11V for signal transmission at VBS=15V  Integrated bootstrap functionality  Over current shutdown  Temperature monitor  Under-voltage lockout at all channels  Low side emitter pins accessible for all phase current monitoring (open emitter)  Cross-conduction prevention  All of 6 switches turn off during protection  Lead-free terminal plating; RoHS compliant  Very low thermal resistance due to DCB Description The CIPOS™ module family offers the chance for integrating various power and control components to increase reliability, optimize PCB size and system costs. It is designed to control three phase AC motors and permanent magnet motors in variable speed drives for applications like an air conditioning, a refrigerator and a washing machine. The package concept is specially adapted to power applications, which need good thermal conduction and electrical isolation, but also EMI-save control and overload protection. TRENCHSTOP™ IGBTs and anti parallel diodes are combined with an optimized SOI gate driver for excellent electrical performance.

MG50Q1BS11 TOSHIB IGBT MODULES  
MG50Q1BS11 TOSHIB IGBT MODULES  
MG50Q1BS11 TOSHIB IGBT MODULES  
MG50Q1BS11 TOSHIB IGBT MODULES  
MG50Q1BS11 TOSHIB IGBT MODULES  

TypischeAnwendungen TypicalApplications • Klimaanlagen • AirConditioning • Motorantriebe • MotorDrives • Servoumrichter • ServoDrives • USV-Systeme • UPSSystems ElektrischeEigenschaften ElectricalFeatures • NiedrigeSchaltverluste • LowSwitchingLosses • TrenchIGBT3 • TrenchIGBT3 • VCEsatmitpositivemTemperaturkoeffizienten • VCEsatwithpositiveTemperatureCoefficient • NiedrigesVCEsat • LowVCEsat MechanischeEigenschaften MechanicalFeatures • Al2O3 Substrat mit kleinem thermischen • Widerstand Al2O3SubstratewithLowThermalResistance • KompaktesDesign • Compactdesign • Lötverbindungstechnik • SolderContactTechnology • Robuste Montage durch integrierte • Befestigungsklammern

TypischeAnwendungen TypicalApplications • 3-Level-Applikationen • 3-level-applications • Motorantriebe • Motordrives • SolarAnwendungen • Solarapplications • USV-Systeme • UPSsystems ElektrischeEigenschaften ElectricalFeatures • HighSpeedIGBTH3 • HighspeedIGBTH3 • NiedrigeSchaltverluste • Lowswitchinglosses • Tvjop=150°C • Tvjop=150°C MechanischeEigenschaften MechanicalFeatures • 3kVAC1minIsolationsfestigkeit • 3kVAC1mininsulation • PressFITVerbindungstechnik • PressFITcontacttechnology • RoHSkonform 

1200 V, 160 A IGBT, 650 V, 100 A IGBT NXH160T120L2Q2F2S1G The NXH160T120L2Q2F2S1G is a power module containing a split T-type neutral point clamped three-level inverter, consisting of two 160 A / 1200 V Half Bridge IGBTs with inverse diodes, two Neutral Point 120 A / 650 V rectifiers, two 100 A / 650 V Neutral Point IGBTs with inverse diodes, two Half Bridge 60 A / 1200 V rectifiers and a negative temperature coefficient thermistor (NTC). Features  Split T-type Neutral Point Clamped Three-level Inverter Module  1200 V IGBT Specifications: VCE(SAT) = 2.15 V, ESW = 4300 J  650 V IGBT specifications: VCE(SAT) = 1.47 V, ESW = 2560 J  Baseplate  Solderable Pins  Thermistor Typical Applications  Solar Inverters  Uninterruptible Power Supplies

The BSM50GD120DN2_B10 is a 1200V, 50A IGBT module from Infineon Technologies (formerly EUPEC), designed for high-power applications. This BSM50GD120DN2_B10 module is a half-bridge configuration suitable for inverters, UPS, and industrial drives, offering low switching losses up to  

FEATURE Inverter + Brake + Drive & Protection IC a) Adopting new 5th generation Full-Gate CSTBTTM chip b) The over-temperature protection which detects the chip surface temperature of CSTBTTM is adopted. c) Error output signal is possible from all each protection upper and lower arm of IPM. • 3φ 50A, 600V Current-sense and temperature sense IGBT type inverter • Monolithic gate drive & protection logic • Detection, protection & status indication circuits for, shortcircuit, over-temperature & under-voltage (P-FO available from upper arm devices) • UL Recognize

FS150R12KT4_B9 INFINEON IGBT MODULE
FS150R12KT4_B9 INFINEON IGBT MODULE
FS150R12KT4_B9 INFINEON IGBT MODULE

• Capsule type metal-ceramic package with precious metalpressure contacts• Medium voltage, high current rectifier diode with slimpackage for lowest thermal resistance• Low power dissipation• Especially suited for water cooling• Forward selections for paralleling available

The NXH450N65L4Q2F2 is a power module containing a I− type neutral point clamped three−level inverter. The integrated field stop trench IGBTs and FRDs provide lower conduction losses and switching losses, enabling designers to achieve high efficiency and superior reliability

Semikron SKD146/16-L140 (and variants like L100, L105, T4) is a high-performance, three-phase bridge rectifier module integrating an IGBT braking chopper in a compact SEMIPONT 6 package, rated for 1600V and approximately 140-146A of output current. It is specifically engineered for industrial applications, including Variable Frequency Drives (VFDs), DC motor controllers, battery chargers, and uninterruptible power supplies (UPS). The module features a robust design with Direct Copper Bonded (DCB) ceramic substrates, which provide excellent thermal management, high isolation, and high surge current capacity (1250A) to ensure reliable operation under heavy, cyclical loads

FEATURE a) Adopting new 5th generation IGBT (CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.9V @Tj=125°C b) I adopt the over-temperature conservation by Tj detection of CSTBT chip, and error output is possible from all each conservation upper and lower arm of IPM. c) Current rating of brake part increased. 50% for the current rating of inverter part. •3φ 150A, 1200V Current-sense IGBT type inverter • 75A, 1200V Current-sense regenerative brake IGBT • Monolithic gate drive & protection logic • Detection, protection & status indication circuits for, shortcircuit, over-temperature & under-voltage (P-Fo available from upper arm devices) • Acoustic noise-less 30kW class inverter application